MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS

Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material st...

Full description

Saved in:
Bibliographic Details
Main Authors Flynn, Patrick M, Fratin, Lorenzo, Fantini, Paolo, Varesi, Enrico, Graettinger, Thomas M
Format Patent
LanguageEnglish
Published 13.06.2024
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:Methods, systems, and devices for a memory device with laterally formed memory cells are described. A material stack that includes a conductive layer between multiple dielectric layers may be formed, where the conductive layer and dielectric layers may form a channel in a sidewall of the material stack. The channel may be filled with one or more materials, where a first side of an outermost material of the one or more materials may be exposed. An opening may be formed in the material stack that exposes a second side of at least one material of the one or more materials. The opening may be used to replace a portion of the at least one material with a chalcogenide material where the electrode materials may be formed before replacing the portion of the at least one material with the chalcogenide material.
Bibliography:Application Number: US202318545636