MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING THE SAME

A multilayer film structure includes a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a S...

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Bibliographic Details
Main Authors UEOKA, Yoshihiro, MESUDA, Masami, SUEMOTO, Yuya
Format Patent
LanguageEnglish
Published 13.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A multilayer film structure includes a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a SiC single crystal forming the SiC substrate and the film containing the nitride-based material has a C content of 2×1019 atoms/cm3 or less and a Cl content of 2×1018 atoms/cm3 or less.
Bibliography:Application Number: US202218553843