Three-Dimensional Integrated Circuit Resistors

Compact polysilicon resistor structures, particularly for RF ICs, and methods of fabricating such structures. Embodiments include three-dimensional (3-D) IC structures that include a 3-D resistor configuration comprising disjointed polysilicon segments spaced by at least one IC substrate and connect...

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Bibliographic Details
Main Authors Moore, Jarred, Goktepeli, Sinan
Format Patent
LanguageEnglish
Published 13.06.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Compact polysilicon resistor structures, particularly for RF ICs, and methods of fabricating such structures. Embodiments include three-dimensional (3-D) IC structures that include a 3-D resistor configuration comprising disjointed polysilicon segments spaced by at least one IC substrate and connected by one or more conductive through-substrate vias (TSVs). Compared to the prior art, embodiments of the present invention provide a reduction in IC area required for a polysilicon resistor and result in the same performance while maintaining low parasitic capacitance. For example, by taking advantage of the substrate cross-sectional height, embodiments of the invention can achieve the same resistive performance while reducing area allocation by more than 30%.
Bibliography:Application Number: US202218080335