SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a silicon cladding layer disposed on the core layer.

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Main Authors Mochizuki, Shogo, WU, Heng, Greene, Andrew M, Xie, Ruilong, Qin, Liqiao, Frougier, Julien, Sung, Min Gyu
Format Patent
LanguageEnglish
Published 23.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a silicon cladding layer disposed on the core layer.
AbstractList A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a silicon cladding layer disposed on the core layer.
Author Mochizuki, Shogo
Frougier, Julien
Qin, Liqiao
Sung, Min Gyu
WU, Heng
Xie, Ruilong
Greene, Andrew M
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– fullname: Frougier, Julien
– fullname: Sung, Min Gyu
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Snippet A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL
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