SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a silicon cladding layer disposed on the core layer.

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Bibliographic Details
Main Authors Mochizuki, Shogo, WU, Heng, Greene, Andrew M, Xie, Ruilong, Qin, Liqiao, Frougier, Julien, Sung, Min Gyu
Format Patent
LanguageEnglish
Published 23.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a field-effect transistor region having a strained channel. The strained channel has a silicon germanium core layer and a silicon cladding layer disposed on the core layer.
Bibliography:Application Number: US202217992373