SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The...

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Bibliographic Details
Main Authors Kao, Kuei-Yu, Chen, Chao-Cheng, Chang, Ming-Ching, Lin, Chih-Han, Chiu, Chih-Chung, Chen, Chen-Ping, Lin, Shih-Yao
Format Patent
LanguageEnglish
Published 23.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.
Bibliography:Application Number: US202418426852