Silicon Etching Solution, Method for Treating Substrate, and Method for Manufacturing Silicon Device

• Main Authors: Hitomi, Tatsuya, Okimura, Kohshiro, Seike, Yoshiki, Noro, Kohsuke
• Format: Patent
• Language: English
• Published: 23.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In etching of a single crystal silicon substrate having a Si crystal plane ((100) plane, (110) plane, and (111) plane) as a main plane, an etching rate on the (110) plane cannot be sufficiently reduced, and there is room for improvement in an etching rate ratio between the (110) plane and the (111)...