Silicon Etching Solution, Method for Treating Substrate, and Method for Manufacturing Silicon Device

In etching of a single crystal silicon substrate having a Si crystal plane ((100) plane, (110) plane, and (111) plane) as a main plane, an etching rate on the (110) plane cannot be sufficiently reduced, and there is room for improvement in an etching rate ratio between the (110) plane and the (111)...

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Bibliographic Details
Main Authors Hitomi, Tatsuya, Okimura, Kohshiro, Seike, Yoshiki, Noro, Kohsuke
Format Patent
LanguageEnglish
Published 23.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In etching of a single crystal silicon substrate having a Si crystal plane ((100) plane, (110) plane, and (111) plane) as a main plane, an etching rate on the (110) plane cannot be sufficiently reduced, and there is room for improvement in an etching rate ratio between the (110) plane and the (111) plane. An object of the present invention is to provide a silicon etching solution having excellent crystal plane isotropy in silicon etching and having a high etching selectivity ratio of silicon to a silicon oxide film.The problem is solved by a silicon etching solution containing: an acid group-containing compound having at least one acid group selected from the group consisting of a carboxy group, a sulfonic acid group, a phosphoric acid group, and a phosphonic acid group, and having pKa of 3.5 or more and 13 or less; a quaternary ammonium hydroxide; an oxidizing agent; and water.
Bibliography:Application Number: US202318515415