HIGH DENSITY STATIC RANDOM-ACCESS MEMORY

A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row.

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Bibliographic Details
Main Authors Anderson, Brent A, Chu, Albert M, Xie, Ruilong, Radens, Carl
Format Patent
LanguageEnglish
Published 09.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor memory cell comprising six vertical-transport field-effect transistors (VTFET) on a wafer. The six VTFET are in a first layer. The six VTFET are in a first row.
Bibliography:Application Number: US202218053451