SILICON NITRIDE METAL LAYER COVERS

A method includes plating a first conductive layer on a second conductive layer, the second conductive layer coupled to a device side of a semiconductor die; using a vapor deposition technique to deposit a silicon nitride layer on the first conductive layer at a pressure lower than 100 Torr; and pla...

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Bibliographic Details
Main Authors MONTOYA, Jonathan Andrew, PAVONE, Salvatore Franks
Format Patent
LanguageEnglish
Published 09.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes plating a first conductive layer on a second conductive layer, the second conductive layer coupled to a device side of a semiconductor die; using a vapor deposition technique to deposit a silicon nitride layer on the first conductive layer at a pressure lower than 100 Torr; and plating a second conductive layer abutting the first conductive layer, the second conductive layer configured to receive a solder ball.
Bibliography:Application Number: US202418414003