SILICON NITRIDE METAL LAYER COVERS
A method includes plating a first conductive layer on a second conductive layer, the second conductive layer coupled to a device side of a semiconductor die; using a vapor deposition technique to deposit a silicon nitride layer on the first conductive layer at a pressure lower than 100 Torr; and pla...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
09.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A method includes plating a first conductive layer on a second conductive layer, the second conductive layer coupled to a device side of a semiconductor die; using a vapor deposition technique to deposit a silicon nitride layer on the first conductive layer at a pressure lower than 100 Torr; and plating a second conductive layer abutting the first conductive layer, the second conductive layer configured to receive a solder ball. |
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Bibliography: | Application Number: US202418414003 |