SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second do...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
09.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure and the STI, forming a second doped region between the first doped region and the first gate structure, forming a first contact plug on the first doped region, and then forming a second contact plug on the second doped region. |
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Bibliography: | Application Number: US202218074511 |