INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

• Main Authors: CHOUKSEY, Siddharth, KENNEL, Harold, AGRAWAL, Ashish, SUNG, Seung Hoon, KAVALIEROS, Jack T, GLASS, Glenn, MURTHY, Anand, GHANI, Tahir
• Format: Patent
• Language: English
• Published: 02.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having germanium-based channels are described. In an example, an integrated circuit structure includes a fin having a lower silicon portion, an intermediate germanium portion on the lower silicon portion, and a silicon germanium portion on the intermediate germanium portion. An isolation structure is along sidewalls of the lower silicon portion of the fin. A gate stack is over a top of and along sidewalls of an upper portion of the fin and on a top surface of the isolation structure. A first source or drain structure is at a first side of the gate stack. A second source or drain structure is at a second side of the gate stack.