INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having germanium-based channels are described. In an example, an integrated circuit structure includes a fin having a lower silicon portion, an interm...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English |
Published |
02.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having germanium-based channels are described. In an example, an integrated circuit structure includes a fin having a lower silicon portion, an intermediate germanium portion on the lower silicon portion, and a silicon germanium portion on the intermediate germanium portion. An isolation structure is along sidewalls of the lower silicon portion of the fin. A gate stack is over a top of and along sidewalls of an upper portion of the fin and on a top surface of the isolation structure. A first source or drain structure is at a first side of the gate stack. A second source or drain structure is at a second side of the gate stack. |
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Bibliography: | Application Number: US202418409509 |