INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having germanium-based channels are described. In an example, an integrated circuit structure includes a fin having a lower silicon portion, an interm...

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Main Authors CHOUKSEY, Siddharth, KENNEL, Harold, AGRAWAL, Ashish, SUNG, Seung Hoon, KAVALIEROS, Jack T, GLASS, Glenn, MURTHY, Anand, GHANI, Tahir
Format Patent
LanguageEnglish
Published 02.05.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having germanium-based channels are described. In an example, an integrated circuit structure includes a fin having a lower silicon portion, an intermediate germanium portion on the lower silicon portion, and a silicon germanium portion on the intermediate germanium portion. An isolation structure is along sidewalls of the lower silicon portion of the fin. A gate stack is over a top of and along sidewalls of an upper portion of the fin and on a top surface of the isolation structure. A first source or drain structure is at a first side of the gate stack. A second source or drain structure is at a second side of the gate stack.
Bibliography:Application Number: US202418409509