THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THE SAME, AND DISPLAY DEVICE HAVING THE SAME

A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second...

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Bibliographic Details
Main Authors LEE, Sun Woo, HAN, Jae Bum, KIM, Min Ji, KIM, Bo Hwa
Format Patent
LanguageEnglish
Published 25.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor may include a first insulating layer disposed on a substrate, a dummy layer disposed on the first insulating layer, a semiconductor layer disposed on the dummy layer, the semiconductor layer including a first area, a second area, and a channel area disposed between the first and second areas, a second insulating layer disposed on the semiconductor layer, a gate electrode overlapping the channel area with the second insulating interposed therebetween, a third insulating layer disposed over the gate electrode, a first electrode disposed on the third insulating layer, the first electrode being electrically connected to the first area, and a second electrode disposed on the third insulating layer spaced apart from the first electrode, the second electrode being electrically connected to the second area. The dummy layer may include indium oxide, and the semiconductor layer may include indium gallium zinc oxide.
Bibliography:Application Number: US202318492927