METHOD FOR OBTAINING THE EQUIVALENT OXIDE THICKNESS OF A DIELECTRIC LAYER

• Main Authors: WU, YI-SHAN, LIN, CHIAO-JUNG, CHANG, MAO-NAN, LIU, CHI-LUN, CHOU, HSUEH-LIANG, HSUEH, YU-HSUN
• Format: Patent
• Language: English
• Published: 25.04.2024
• Subjects: APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM]; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; SCANNING-PROBE TECHNIQUES OR APPARATUS; TESTING

In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.