SURFACE ENERGY MODIFICATION IN HYBRID BONDING

A semiconductor structure includes a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. The semiconductor structure includes a conductive feature embedded in the dielectric layer. The semiconductor structure includes a barrier layer disposed between the conduct...

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Bibliographic Details
Main Authors HOOGE, Joshua, CARCASI, Michael
Format Patent
LanguageEnglish
Published 18.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a semiconductor substrate and a dielectric layer disposed over the semiconductor substrate. The semiconductor structure includes a conductive feature embedded in the dielectric layer. The semiconductor structure includes a barrier layer disposed between the conductive feature and the dielectric layer. The semiconductor structure further includes a self-assembled monolayer (SAM) disposed over the barrier layer, at least a portion of the SAM directly contacting the conductive feature.
Bibliography:Application Number: US202318313177