SEMICONDUCTOR DEVICE

Provided is a semiconductor device comprising: a plurality of trench portions; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of the second conductivity type...

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Bibliographic Details
Main Authors HAMASAKI, Ryutaro, YOSHIDA, Kosuke, YAMADA, Takuya, NOGUCHI, Seiji, SAKURAI, Yosuke
Format Patent
LanguageEnglish
Published 11.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a semiconductor device comprising: a plurality of trench portions; a first lower end region of a second conductivity type that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a well region of the second conductivity type that is arranged in a different location from the first lower end region in a top view, and a second lower end region of the second conductivity type that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.
Bibliography:Application Number: US202318542817