TRANSITION BETWEEN DIFFERENT ACTIVE REGIONS

Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region...

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Bibliographic Details
Main Authors Lin, You-Ting, Peng, Yuan-Ching, Jian, Yu Mei, Lin, Po Shao, Kuo, Jiun-Ming
Format Patent
LanguageEnglish
Published 11.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. The first width is greater than the second width.
Bibliography:Application Number: US202318159989