SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device may include a barrier layer on a channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and a source and a drain spaced apart from each other on the channel layer. The barrier layer may have a greater...

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Bibliographic Details
Main Authors PARK, Junhyuk, KIM, Joonyong, KIM, Boram, HWANG, Injun, OH, Jaejoon, KIM, Jongseob, HWANG, Sunkyu
Format Patent
LanguageEnglish
Published 04.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include a barrier layer on a channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and a source and a drain spaced apart from each other on the channel layer. The barrier layer may have a greater energy band gap than the channel layer. The gate semiconductor layer may include a first surface contacting the barrier layer and a second surface contacting the gate electrode, and a sidewall connecting the first surface with the second surface. An area of the second surface of the gate semiconductor layer may be narrower than an area of the first surface. The sidewall of the gate semiconductor layer may include a plurality of surfaces having different slopes.
Bibliography:Application Number: US202318193859