STABILIZING DIELECTRIC STRESS IN A GALVANIC ISOLATION DEVICE

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall o...

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Bibliographic Details
Main Authors Sugimoto, Mitsuhiro, Takei, Yoshihiro, Williams, Byron Lovell, West, Jeffrey Alan
Format Patent
LanguageEnglish
Published 04.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau. The SiOxNy surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.
Bibliography:Application Number: US202218067703