Silicon Carbide Device and Method for Forming a Silicon Carbide Device

A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located betwe...

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Bibliographic Details
Main Authors Joshi, Ravi Keshav, Fürgut, Edward, Hilsenbeck, Jochen, Basler, Thomas, Gruber, Martin, Scholz, Wolfgang
Format Patent
LanguageEnglish
Published 04.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon carbide device includes a silicon carbide substrate, a contact layer located on the silicon carbide substrate and including nickel and silicon, a barrier layer structure including titanium and tungsten, and a metallization layer comprising copper, wherein the contact layer is located between the silicon carbide substrate and at least a part of the barrier layer structure, wherein the barrier layer structure is located between the silicon carbide substrate and the metallization layer, wherein the metallization layer is configured as a contact pad of the silicon carbide device.
Bibliography:Application Number: US202318526127