FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN

A semiconductor device includes a nanostructure field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extends vertically upward from a top surface of the first S/D region. The FET further includes a second S/D...

Full description

Saved in:
Bibliographic Details
Main Authors Mochizuki, Shogo, Clevenger, Lawrence A, Anderson, Brent A, Choi, Kisik, Xie, Ruilong, Fan, Su Chen, NGUYEN, SON
Format Patent
LanguageEnglish
Published 04.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a nanostructure field effect transistor (FET). The FET includes a gate and a first source or drain (S/D) region. A frontside S/D contact may be connected to and extends vertically upward from a top surface of the first S/D region. The FET further includes a second S/D region. The second S/D region extends below a bottom surface of the gate. A backside S/D contact may be connected to and extend vertically downward from a bottom surface of the second S/D region.
Bibliography:Application Number: US202217937955