SEMICONDUCTOR STRUCTURE

A semiconductor structure includes a first channel layer and a first barrier layer on the first channel layer. The first channel layer has a first potential well adjacent to the interface between the first channel layer and the first barrier layer. The semiconductor structure further includes a seco...

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Bibliographic Details
Main Authors SHEN, Yi-Ru, CHEN, Chih-Hao, LIN, Yi-Chao
Format Patent
LanguageEnglish
Published 28.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure includes a first channel layer and a first barrier layer on the first channel layer. The first channel layer has a first potential well adjacent to the interface between the first channel layer and the first barrier layer. The semiconductor structure further includes a second channel layer on the first barrier layer, a second barrier layer on the second channel layer, and an intermediate layer between the second channel layer and the second barrier layer. The second channel layer has a second potential well adjacent to the interface between the second channel layer and the intermediate layer. The intermediate layer has a greater energy gap than either the first barrier layer or the second barrier layer. The energy gap of the first barrier layer is no less than the energy gap of the second barrier layer.
Bibliography:Application Number: US202318226181