MUSHROOMED VIA STRUCTURES FOR TRENCH CONTACT OR GATE CONTACT

Mushroomed via structures for trench contact or gate contact are described. In an example, an integrated circuit structure includes a trench contact structure over an epitaxial source or drain structure. A dielectric layer is over the trench contact structure. A trench contact via is in an opening i...

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Bibliographic Details
Main Authors TIWARI, Vishal, TEWELDEBRHAN, Desalegne B, GULER, Leonard P, HARAN, Mohit K, GHANI, Tahir
Format Patent
LanguageEnglish
Published 28.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Mushroomed via structures for trench contact or gate contact are described. In an example, an integrated circuit structure includes a trench contact structure over an epitaxial source or drain structure. A dielectric layer is over the trench contact structure. A trench contact via is in an opening in the dielectric layer, the trench contact via in contact with the trench contact structure. A trench contact via extension is on the trench contact via. The trench contact via extension above the dielectric layer and extending laterally beyond the trench contact via.
Bibliography:Application Number: US202217955511