METHODS FOR SEAM REPAIR AND SEMICONDUCTOR STRUCTURE MANUFACTURED THEREOF

The present disclosure provides a method for repairing a seam within a conformally deposited material. One or more seam repairing precursor sources may be delivered to seams or voids using a carrier at a super critical fluid phase. At the super critical fluid phase, the carrier has liquid like densi...

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Bibliographic Details
Main Authors Lin, Pinyen, Sano, Kenichi, Lin, Chin-Hsiang, Chang, Hsu-Kai
Format Patent
LanguageEnglish
Published 28.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure provides a method for repairing a seam within a conformally deposited material. One or more seam repairing precursor sources may be delivered to seams or voids using a carrier at a super critical fluid phase. At the super critical fluid phase, the carrier has liquid like density and gas like high diffusion capability, therefore capable of delivering the repairing precursor sources to seams or voids under surfaces of a structure. In some embodiments, carbon dioxide or argon may be used as a carrier.
Bibliography:Application Number: US202318106680