SUPPORT PILLARS WITH MULTIPLE, ALTERNATING EPITAXIAL SILICON FOR HORIZONTAL ACCESS DEVICES IN VERTICAL

• Main Authors: Hwang, David K, Nakamura, Yoshitaka, Walters, Glen H, Sills, Scott E, Ma, Yuanzhi, Lee, Si-Woo
• Format: Patent
• Language: English
• Published: 21.03.2024

Systems, methods and apparatus are provided for an array of vertically stacked memory cells having horizontally oriented access devices and storage nodes formed in tiers. And, more particularly, to multiple, alternating silicon germanium (SiGe) and single crystalline silicon (Si) in different thicknesses to form tiers in which to form the horizontal access devices in vertical three-dimensional (3D) memory. The horizontally oriented access devices can have a first source/drain regions and a second source drain regions separated by single crystalline silicon (Si) channel regions. The single crystalline silicon (Si) channel regions can include a dielectric material to provide support structure to the single crystalline channel regions when forming the horizontal access devices in vertical three-dimensional (3D) memory. Horizontally oriented access lines can connect to gate structures opposing the channel regions. Vertical digit lines coupled to the first source/drain regions.