Method for Fabricating a Power Semiconductor Device

A method for fabricating a SiC power semiconductor device includes: providing a SiC power semiconductor die; depositing a metallization layer over the power semiconductor die, the metallization layer including a first metal; arranging the power semiconductor die over a die carrier such that the meta...

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Bibliographic Details
Main Authors Frank, Paul, Heinrich, Alexander, Langer, Gregor, Otremba, Ralf, Pedone, Daniel, Ludsteck-Pechloff, Alexandra
Format Patent
LanguageEnglish
Published 21.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a SiC power semiconductor device includes: providing a SiC power semiconductor die; depositing a metallization layer over the power semiconductor die, the metallization layer including a first metal; arranging the power semiconductor die over a die carrier such that the metallization layer faces the die carrier, the die carrier being at least partially covered by a plating that includes Ni; and diffusion soldering the power semiconductor die to the die carrier such that a first intermetallic compound is formed between the power semiconductor die and the plating, the first intermetallic compound including Ni3Sn4.
Bibliography:Application Number: US202318522991