LOW-FREQUENCY NOSIE TRANSISTORS WITH CURVED CHANNELS

A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel wi...

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Bibliographic Details
Main Authors Chen, Shih-Chang, Shen, Wen-Chao
Format Patent
LanguageEnglish
Published 14.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section; a first drain and a second drain; a first source and a second source; a first curved channel and a second curved channel located at the first curved section of the first fin and the first curved section of the second fin, respectively; and a third curved channel and a fourth curved channel located at the second curved section of the first fin and the second curved section of the second fin, respectively.
Bibliography:Application Number: US202318171362