RADICAL TREATMENT FOR METAL GATE STACK

Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack....

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Bibliographic Details
Main Authors Yang, Yixiong, Karandikar, Keyur, Huang, Tianyi, Zheng, Yuanhua, Lin, Yongjing, Mao, Elizabeth, Liu, Zhihui, Ganguli, Seshadri, Gandikota, Srinivas
Format Patent
LanguageEnglish
Published 14.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N2*) and hydrogen radicals (H*) over the surface of the metal gate stack.
Bibliography:Application Number: US202217941557