METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

A gate insulating film has a multilayer structure including a SiO2 film, a LaAlO3 film, and an Al2O3 film that are sequentially stacked, relative permittivity of the gate insulating film being optimized by the LaAlO3 film. In forming the LaAlO3 film constituting the gate insulating film, a La2O3 fil...

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Bibliographic Details
Main Authors FUJISHIMA, Naoto, SIN, Johnny Kin On, TSUJI, Takashi, HUANG, Linhua, ONOZAWA, Yuichi
Format Patent
LanguageEnglish
Published 07.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A gate insulating film has a multilayer structure including a SiO2 film, a LaAlO3 film, and an Al2O3 film that are sequentially stacked, relative permittivity of the gate insulating film being optimized by the LaAlO3 film. In forming the LaAlO3 film constituting the gate insulating film, a La2O3 film and an Al2O3 film are alternately deposited repeatedly using an ALD method. The La2O3 film is deposited first, whereby during a POA performed thereafter, a sub-oxide of the surface of the SiO2 film is removed by a cleaning effect of lanthanum atoms in the La2O3 film. A temperature of the POA is suitably set in a range from 700 degrees C. to less than 900 degrees C.
Bibliography:Application Number: US202318308044