DOUBLE-DECKED INTERCONNECT FEATURES

An integrated circuit structure includes a first interconnect layer, and a second interconnect layer above the first interconnect layer. The first interconnect layer includes a first interconnect feature and a second interconnect feature. The second interconnect layer includes a third interconnect f...

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Bibliographic Details
Main Authors Choi, June, Mehta, Nikhil J, Ong, Clifford L, Schenker, Richard, Wallace, Charles H
Format Patent
LanguageEnglish
Published 29.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit structure includes a first interconnect layer, and a second interconnect layer above the first interconnect layer. The first interconnect layer includes a first interconnect feature and a second interconnect feature. The second interconnect layer includes a third interconnect feature, a fourth interconnect feature, and a fifth interconnection feature. The third interconnect feature extends from an upper surface of the first interconnect feature to an upper surface of the second interconnect layer. In an example, the fourth interconnect feature extends from an upper surface of the second interconnect feature to below the upper surface of the second interconnect layer, and the fifth interconnect feature extends from an upper surface of the fourth interconnect feature to the upper surface of the second interconnect layer. Thus, a double-decked vertical stack of interconnect features is formed using the fourth interconnect feature within the second interconnect layer.
Bibliography:Application Number: US202217894380