METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

A method of manufacturing an integrated circuit device includes preparing a semiconductor substrate having an active area and a field area, sequentially forming a lower insulation layer, a buried layer, a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the semic...

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Bibliographic Details
Main Authors SEONG, Geumjung, HAN, Seunguk, PARK, Jiho, KIM, Youngwoo, PARK, Yonghan
Format Patent
LanguageEnglish
Published 29.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing an integrated circuit device includes preparing a semiconductor substrate having an active area and a field area, sequentially forming a lower insulation layer, a buried layer, a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the semiconductor substrate, removing a portion of the third sacrificial layer to form a first sacrificial pattern, removing a portion of the second sacrificial layer and the first sacrificial pattern to form a second sacrificial pattern, removing a portion of the first sacrificial layer and the second sacrificial pattern to form a third sacrificial pattern, removing a portion of the buried layer and the third sacrificial pattern to form a buried pattern, and removing a portion of the lower insulation layer and a portion of the semiconductor substrate by using the buried pattern as an etch mask to form a word line trench.
Bibliography:Application Number: US202318355520