SRAM INCLUDING REFERENCE VOLTAGE GENERATOR AND READ METHOD THEREOF

A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and...

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Bibliographic Details
Main Authors LEE, CHANHO, KIM, HYEONGCHEOL, CHOI, KYUWON
Format Patent
LanguageEnglish
Published 29.02.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and pre-charges the bit line and the reference bit line, and a sense amplifier that is connected with the bit line and the reference bit line, compares a voltage of the bit line and a voltage of the reference bit line to generate a comparison result, and determines a value of the data stored in the memory cell based on the comparison result. The reference voltage generator includes first-type transistors.
Bibliography:Application Number: US202318347852