YTTRIUM COMPOUND, SOURCE MATERIAL FOR FORMING YTTRIUM-CONTAINING FILM, AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME

An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

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Bibliographic Details
Main Authors RYU, Seungmin, CHO, Younjoung, SATO, Haruyoshi, KIM, Hyunwoo, HARANO, Kazuki, PARK, Gyuhee, YAMASHITA, Atsushi, MURATA, Kiyoshi
Format Patent
LanguageEnglish
Published 29.02.2024
Subjects
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
ORGANIC CHEMISTRY
SEMICONDUCTOR DEVICES
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Summary:An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):
Bibliography:Application Number: US202318231339