PHASE CHANGE HETEROSTRUCTURE, AND PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME

Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electro...

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Main Authors Yang, Kiyeon, SUNG, Hajun, Choi, Minwoo, Lee, Changseung, Kang, Youngjae, Yang, Wooyoung, Park, Changyup
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
ELECTRICITY
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Abstract Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.
AbstractList Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.
Author Park, Changyup
Choi, Minwoo
Yang, Kiyeon
Lee, Changseung
SUNG, Hajun
Kang, Youngjae
Yang, Wooyoung
Author_xml – fullname: Yang, Kiyeon
– fullname: SUNG, Hajun
– fullname: Choi, Minwoo
– fullname: Lee, Changseung
– fullname: Kang, Youngjae
– fullname: Yang, Wooyoung
– fullname: Park, Changyup
BookMark eNrjYmDJy89L5WTwD_BwDHZVcPZw9HN3VfBwDXEN8g8OCQp1DgkNctVRcPRzUUBR4evq6x8UqeDiGubp7Krg6efsE-ri6eeuEOLhqhDs6OvKw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDIxMDMxMDQ0tHA2NiVMFAAo1MRQ
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2024065118A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2024065118A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:55:41 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2024065118A13
Notes Application Number: US202218068821
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&CC=US&NR=2024065118A1
ParticipantIDs epo_espacenet_US2024065118A1
PublicationCentury 2000
PublicationDate 20240222
PublicationDateYYYYMMDD 2024-02-22
PublicationDate_xml – month: 02
  year: 2024
  text: 20240222
  day: 22
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies Samsung Electronics Co., Ltd
RelatedCompanies_xml – name: Samsung Electronics Co., Ltd
Score 3.521387
Snippet Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
Title PHASE CHANGE HETEROSTRUCTURE, AND PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&locale=&CC=US&NR=2024065118A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfR1dS8Mw8BhT1Dedih9TAkqfLNqPdfowpEuzVbHtWNsxn0bTdCBIN1zFv-8lbjpf9pbkwpEcudxd7iMA1yLDU2s4uW5k4k63LZHr3ORctw2jcLKHe5GrrPcgdPzUfh63xjV4X-XCqDqhX6o4InJUjvxeqft6_veI5anYysUtf8Oh2WMv6Xja0jqWrgLT1Lxuhw0iL6IapZ001sLhD8yR6rSLttIWKtJtyQ9s1JV5KfN1odLbh-0B4iurA6gVZQN26ervtQbsBEuXNzaX3Lc4hGjguzEj1HfDPiM-Q000ipNhSmXowg1xQ4_8mxGwIBq-Eo-NnigjaL6_oPYX9kniMxK7ATuCqx5LqK_jyia_hJik8fo2rGOol7OyOAHSmhYo-oUwuaygJmxe2LzNbRTVFrf41DqF5iZMZ5vB57AnuyqR22xCvfr4LC5QFFf8UlHwG7K9hWc
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dT8IwEL8QNOKbosYP1CaaPbnoPhj6QMzoCkXZRthG4InQbSQmZhCZ8d_3OkHxhbem11zaS6_3u_buCnCbTHHXalasatPkQTWNJFaFLoRqalpqTZ8ek7jIenc9i0fmy6g-KsH7OhemqBP6VRRHRI2KUd_z4rxe_F1iOUVs5fJevGHX_LkdNh1l5R3LpwJdV5xWk_V9x6cKpc0oULzBD82ScNpGX2kHQXZD6gMbtmReymLTqLQPYLeP_LL8EEppVoUKXf-9VoU9d_Xkjc2V9i2PwO9zO2CEctvrMMIZIlE_CAcRlaELd8T2HPJvhMtcfzAmDht2KSPovvcQ_XkdEnJGAttlx3DTZiHlKs5s8iuISRRsLsM4gXI2z9JTIPVZiqY_SXQhK6glpkhN0RAmmmpDGGJmnEFtG6fz7eRrqPDQ7U16Xe_1AvYlqUjq1mtQzj8-00s0y7m4KqT5DSDyiFo
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=PHASE+CHANGE+HETEROSTRUCTURE%2C+AND+PHASE+CHANGE+MEMORY+DEVICE+INCLUDING+THE+SAME&rft.inventor=Yang%2C+Kiyeon&rft.inventor=SUNG%2C+Hajun&rft.inventor=Choi%2C+Minwoo&rft.inventor=Lee%2C+Changseung&rft.inventor=Kang%2C+Youngjae&rft.inventor=Yang%2C+Wooyoung&rft.inventor=Park%2C+Changyup&rft.date=2024-02-22&rft.externalDBID=A1&rft.externalDocID=US2024065118A1