PHASE CHANGE HETEROSTRUCTURE, AND PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME

• Main Authors: Yang, Kiyeon, SUNG, Hajun, Choi, Minwoo, Lee, Changseung, Kang, Youngjae, Yang, Wooyoung, Park, Changyup
• Format: Patent
• Language: English
• Published: 22.02.2024
• Subjects: ELECTRICITY

Provided are a phase change heterostructure and a phase change memory device including the same. The phase change memory device including the phase change heterostructure may include a plurality of memory cells. Each of the plurality of memory cells may include a first electrode and a second electrode, which may be spaced apart from each other, and a phase change heterostructure between the first electrode and the second electrode. The phase change heterostructure may include a plurality of phase change material layers and a plurality of thermal barrier layers alternately stacked on each other. A material of the plurality of thermal barrier layers have a thermal conductivity lower than a materials of the plurality of phase change material layers.