VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resista...

Full description

Saved in:
Bibliographic Details
Main Authors KANG, Jooheon, KIM, Sunho, AHN, Dongho, PARK, Garam, SONG, Hyunjae, WOO, Myunghun, KIM, Seyun, YANG, Seungyeul, KIM, Yumin, LEE, Jinwoo
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
ELECTRICITY
Online AccessGet full text

Cover

Abstract Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
AbstractList Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
Author AHN, Dongho
WOO, Myunghun
PARK, Garam
KANG, Jooheon
YANG, Seungyeul
LEE, Jinwoo
KIM, Sunho
SONG, Hyunjae
KIM, Seyun
KIM, Yumin
Author_xml – fullname: KANG, Jooheon
– fullname: KIM, Sunho
– fullname: AHN, Dongho
– fullname: PARK, Garam
– fullname: SONG, Hyunjae
– fullname: WOO, Myunghun
– fullname: KIM, Seyun
– fullname: YANG, Seungyeul
– fullname: KIM, Yumin
– fullname: LEE, Jinwoo
BookMark eNrjYmDJy89L5WTwCnMM8nR08nFVCHIN9gwOcfRzdlXwdfX1D4pUcHEN8wTyHP1cFFx9XJ1Dgvz9PJ1hop5-zj6hLp5-7gohHq4KwY6-rjwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAyMTAzNTAwNDR0Jg4VQAkqy-6
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US2024065001A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2024065001A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:57:15 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2024065001A13
Notes Application Number: US202318299403
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&CC=US&NR=2024065001A1
ParticipantIDs epo_espacenet_US2024065001A1
PublicationCentury 2000
PublicationDate 20240222
PublicationDateYYYYMMDD 2024-02-22
PublicationDate_xml – month: 02
  year: 2024
  text: 20240222
  day: 22
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies SAMSUNG ELECTRONICS CO,LTD
RelatedCompanies_xml – name: SAMSUNG ELECTRONICS CO,LTD
Score 3.5222502
Snippet Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
Title VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&locale=&CC=US&NR=2024065001A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LHlIDSt-L66fZQpEsz17G2o-3GfBrN2oEg3XAV_30vtdU97S3JQUgOLr-7JL87gMdkyc1U1TLZyFJV1lNNk_kz12UFwbqXdhASTcEd9nxzONVHc2PegI-aC1PmCf0ukyOiRS3R3ovyvN78X2I55d_K7RN_x6H1yyC2HKmKjsVTgapKTt9ik8AJqESpNY0kP_yVoTfSUWyMlQ6EIy0y7bNZX_BSNrugMjiFwwnOlxdn0MjyFhzTuvZaC4686skbm5X1bc9hNLND1-6PGUG1uVEs6soQj3lB-EYcNnOxZ_sOYWNG4zDwXVqPYuQ-RsfPfyXxkJHI9tgFPAxYTIcyLmrxp4PFNNrdgXYJzXydZ1dA0ENLlFXSW626XV1LkwTxRk-VROEG72Ud4xra-2a62S--hRPRLTncahuaxedXdocoXPD7Unk_inyDtg
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsWPqQGlb8X1ax8PQ7o0s539GG035tNo1g4E6Yar-O97qZvuaW_JHRzJweV3l-TuAB6TOW-lqpbJRpaqsp5qmszbXJcVBOtu2kRIbIncYc9v2WN9ODWmFfjY5sKUdUK_y-KIaFFztPeiPK9X_5dYVvm3cv3E35G0fB7EPUvaRMfiqUBVJavfY6PACqhEaW8cSX74y0NvpKmYGCsdtEV9XuE8TfoiL2W1CyqDEzgcoby8OIVKltehRre91-pw5G2evHG4sb71GQwnZuiYfZcRVJsTxaKvDPGYF4RvxGITB2embxHmMhqHge_QLRUjdxcdP_-FxDYjkemxc3gYsJjaMi5q9qeD2Tja3YF2AdV8mWeXQNBDS5RF0l0sOh1dS5ME8UZPlUThBu9mTeMKGvskXe9n30PNjj135jr-6w0cC1aZz602oFp8fmW3iMgFvysV-QPcQoaj
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=VARIABLE+RESISTANCE+MEMORY+DEVICE+AND+ELECTRONIC+DEVICE+INCLUDING+THE+SAME&rft.inventor=KANG%2C+Jooheon&rft.inventor=KIM%2C+Sunho&rft.inventor=AHN%2C+Dongho&rft.inventor=PARK%2C+Garam&rft.inventor=SONG%2C+Hyunjae&rft.inventor=WOO%2C+Myunghun&rft.inventor=KIM%2C+Seyun&rft.inventor=YANG%2C+Seungyeul&rft.inventor=KIM%2C+Yumin&rft.inventor=LEE%2C+Jinwoo&rft.date=2024-02-22&rft.externalDBID=A1&rft.externalDocID=US2024065001A1