VARIABLE RESISTANCE MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resista...

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Main Authors KANG, Jooheon, KIM, Sunho, AHN, Dongho, PARK, Garam, SONG, Hyunjae, WOO, Myunghun, KIM, Seyun, YANG, Seungyeul, KIM, Yumin, LEE, Jinwoo
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
ELECTRICITY
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Summary:Provided area a variable resistance memory device and/or an electronic device including the same. The variable resistance memory device includes: a resistance change layer including a metal oxide having an oxygen deficient ratio greater than or equal to about 9%; a semiconductor layer on the resistance change layer; a gate insulating layer on the semiconductor layer; and a plurality of electrodes on the gate insulating layer to be apart from each other.
Bibliography:Application Number: US202318299403