NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a g...

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Main Authors Kim, Yumin, Woo, Myunghun, Song, Hyunjae, Park, Garam, Yang, Seungyeul, Kang, Jooheon, Kim, Seyun, Kim, Sunho, Lee, Jinwoo, Ahn, Dongho
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Abstract Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.
AbstractList Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.
Author Park, Garam
Song, Hyunjae
Kim, Yumin
Kang, Jooheon
Lee, Jinwoo
Ahn, Dongho
Yang, Seungyeul
Kim, Seyun
Kim, Sunho
Woo, Myunghun
Author_xml – fullname: Kim, Yumin
– fullname: Woo, Myunghun
– fullname: Song, Hyunjae
– fullname: Park, Garam
– fullname: Yang, Seungyeul
– fullname: Kang, Jooheon
– fullname: Kim, Seyun
– fullname: Kim, Sunho
– fullname: Lee, Jinwoo
– fullname: Ahn, Dongho
BookMark eNrjYmDJy89L5WSw8vP3C_P3cQzx9HFV8HX19Q-KVHBxDfN0dlVw9HNR8A9wDQLK-bkD5UI8_IECbgohHq4KwY6-rjwMrGmJOcWpvFCam0HZzTXE2UM3tSA_PrW4IDE5NS-1JD402MjAyMTAzNTAwMDR0Jg4VQBYeStm
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID US2024065000A1
GroupedDBID EVB
ID FETCH-epo_espacenet_US2024065000A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:55:41 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US2024065000A13
Notes Application Number: US202318169436
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&CC=US&NR=2024065000A1
ParticipantIDs epo_espacenet_US2024065000A1
PublicationCentury 2000
PublicationDate 20240222
PublicationDateYYYYMMDD 2024-02-22
PublicationDate_xml – month: 02
  year: 2024
  text: 20240222
  day: 22
PublicationDecade 2020
PublicationYear 2024
RelatedCompanies Samsung Electronics Co., Ltd
RelatedCompanies_xml – name: Samsung Electronics Co., Ltd
Score 3.522316
Snippet Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change...
SourceID epo
SourceType Open Access Repository
SubjectTerms CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Title NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240222&DB=EPODOC&locale=&CC=US&NR=2024065000A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_G_HzTqvgxJaD0rTjTbhahSNemdrI2Y-vGfBpdk4Ig3bAV_32T2Ome9pg7OC6By-Xucr8DuGMPC9wxWW7YtskNi5m5kdrMNEyr22a4zXOmuvijuBtOrNdZZ9aAj3UvjMIJ_VbgiMKiMmHvlbqvV_9JLF_9rSzvF--CtHwOEsfX6-hYlgow1v2eQ4bUp57uec5krMejX15Xov-7IlbakQ9pibRPpj3Zl7LadCrBEewOhbyiOoYGLzQ48Naz1zTYj-qStwZ76o9mVgpibYflCTzFNJ7SgZv0BwRFJKKjN-STad8jyI19RIdE5p7iF8FLQioIAUpCgsZuRE7hNiCJFxpCnfnf7ueT8abu5hk0i2XBzwFxO00fZZnLyoSfbaciFklTLCe4YMyynF9Aa5uky-3sKziUS9W9jVvQrD6_-LXwv9XiRh3bD9tFgi4
link.rule.ids 230,309,786,891,25594,76906
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_G_JhvOhU_pgaUvhVn2m1FGNK1qZ226di6MZ9K16QgSDdcxX_fJG66p73ewXEJXC739TuAO_Ywwy2D5bplGVw3mZHrqcUM3TDbTYabPGdqij-kbX9svkxb0wp8rGdhFE7otwJHFBaVCXsv1Xu9-E9iuaq3cnk_exek-ZMXd11tFR3LUgHGmtvrkkHkRo7mON3xSKPDX15bov_bIlba6Uh8Xvl5mvTkXMpi06l4h7A7EPKK8ggqvKhDzVnvXqvDfrgqeddhT_VoZktBXNnh8hgeaUQnUWDH_YCgkITR8A25ZNJ3CLKpi6IBkbkn-ix4sR8Jgodin6CRHZITuPVI7Pi6UCf5O30yHm3qbpxCtZgX_AwQt9K0I8tcZib8bDMVsUiaYrnBBWOW5fwcGtskXWxn30DNj8MgCfr09RIOJEtNcuMGVMvPL34lfHE5u1ZX-AMaqIUb
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=NONVOLATILE+MEMORY+DEVICE+AND+OPERATING+METHOD+OF+THE+SAME&rft.inventor=Kim%2C+Yumin&rft.inventor=Woo%2C+Myunghun&rft.inventor=Song%2C+Hyunjae&rft.inventor=Park%2C+Garam&rft.inventor=Yang%2C+Seungyeul&rft.inventor=Kang%2C+Jooheon&rft.inventor=Kim%2C+Seyun&rft.inventor=Kim%2C+Sunho&rft.inventor=Lee%2C+Jinwoo&rft.inventor=Ahn%2C+Dongho&rft.date=2024-02-22&rft.externalDBID=A1&rft.externalDocID=US2024065000A1