NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME

Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a g...

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Bibliographic Details
Main Authors Kim, Yumin, Woo, Myunghun, Song, Hyunjae, Park, Garam, Yang, Seungyeul, Kang, Jooheon, Kim, Seyun, Kim, Sunho, Lee, Jinwoo, Ahn, Dongho
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Provided are a nonvolatile memory device and an operating method thereof. The nonvolatile memory device may include a conductive pillar, a resistance change layer surrounding a side surface of the conductive pillar, a semiconductor layer surrounding a side surface of the resistance change layer, a gate insulating layer surrounding a side surface of the semiconductor layer, and a plurality of insulating patterns and a plurality of gate electrodes alternately arranged along a surface of the gate insulating layer. The plurality of insulating patterns and the plurality of gate electrodes may surround a side surface of the gate insulating layer.
Bibliography:Application Number: US202318169436