Connection Between Gate Structure And Source/Drain Feature
An IC structure includes an SRAM cell. In an embodiment, the SRAM cell includes a channel region over a substrate, a source/drain feature coupled to the channel region, a gate structure intersecting the channel region, and a first contact feature electrically coupled to the source/drain feature and...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
22.02.2024
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Online Access | Get full text |
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