Connection Between Gate Structure And Source/Drain Feature

An IC structure includes an SRAM cell. In an embodiment, the SRAM cell includes a channel region over a substrate, a source/drain feature coupled to the channel region, a gate structure intersecting the channel region, and a first contact feature electrically coupled to the source/drain feature and...

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Bibliographic Details
Main Authors Chiu, Yi-Hsun, Chang, Feng-Ming
Format Patent
LanguageEnglish
Published 22.02.2024
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Summary:An IC structure includes an SRAM cell. In an embodiment, the SRAM cell includes a channel region over a substrate, a source/drain feature coupled to the channel region, a gate structure intersecting the channel region, and a first contact feature electrically coupled to the source/drain feature and the gate structure. A portion of the first contact feature is disposed directly under the gate structure.
Bibliography:Application Number: US202217892779