SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third met...

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Main Authors WEN, Jiawei, WONG, King Yuen, ZHANG, Yulong, HAO, Ronghui, ZHANG, Xiaoyan, ZHANG, Jinhan, LI, Xingjun
Format Patent
LanguageEnglish
Published 22.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.
Bibliography:Application Number: US202117618881