Mask Blank Glass Substrate
A mask blank glass substrate having a maximum value of a circularly averaged power spectral density of 1,000 nm4 or less at a spatial frequency of 0.1 μm−1 or more and 20 μm−1 or less, the maximum value being obtained by measuring a surface morphology of a region of 10 μm×10 μm with an atomic force...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
15.02.2024
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A mask blank glass substrate having a maximum value of a circularly averaged power spectral density of 1,000 nm4 or less at a spatial frequency of 0.1 μm−1 or more and 20 μm−1 or less, the maximum value being obtained by measuring a surface morphology of a region of 10 μm×10 μm with an atomic force microscope. |
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| AbstractList | A mask blank glass substrate having a maximum value of a circularly averaged power spectral density of 1,000 nm4 or less at a spatial frequency of 0.1 μm−1 or more and 20 μm−1 or less, the maximum value being obtained by measuring a surface morphology of a region of 10 μm×10 μm with an atomic force microscope. |
| Author | TAKEUCHI, Masaki YARITA, Naoki HARADA, Daijitsu |
| Author_xml | – fullname: TAKEUCHI, Masaki – fullname: HARADA, Daijitsu – fullname: YARITA, Naoki |
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| Notes | Application Number: US202318495139 |
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| RelatedCompanies | Shin-Etsu Chemical Co., Ltd |
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| Snippet | A mask blank glass substrate having a maximum value of a circularly averaged power spectral density of 1,000 nm4 or less at a spatial frequency of 0.1 μm−1 or... |
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| SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| Title | Mask Blank Glass Substrate |
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