Fin Profile Control

Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughness. Consequently, curr...

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Bibliographic Details
Main Authors Lin, Ta-Wei, Huang, Kuo-Bin, Liao, Ssu-Yu, Su, Tsu-Hui, Fan, Chun-Hsiang
Format Patent
LanguageEnglish
Published 08.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughness. Consequently, current flow within the channel regions of fins and nanostructured channel structures can be improved, enhancing device performance.
Bibliography:Application Number: US202217879638