MOLYBDENUM DEPOSITION IN FEATURES

Provided are deposition processes including deposition of a thin, protective Mo layer using a molybdenum chloride (MoClx) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoOyXz) precursor. The protective Mo layer enables Mo fill using an MoOyXz prec...

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Bibliographic Details
Main Authors MANDIA, David Joseph, NA, Jeong-Seok, LAI, Chiukin Steven, THOMBARE, Shruti Vivek, HSIEH, Yao-Tsung
Format Patent
LanguageEnglish
Published 08.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided are deposition processes including deposition of a thin, protective Mo layer using a molybdenum chloride (MoClx) precursor. This may be followed by Mo deposition to fill the feature using a molybdenum oxyhalide (MoOyXz) precursor. The protective Mo layer enables Mo fill using an MoOyXz precursor without oxidation of the underlying surfaces. Also provided are in-situ clean processes in which a MoClx precursor is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and/or fill a feature.
Bibliography:Application Number: US202218258973