METHODS FOR CONSTRUCTING PACKAGE SUBSTRATES WITH HIGH DENSITY

A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a...

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Bibliographic Details
Main Authors Kulkarni, Deepak Vasant, Alam, Arsalan, Wilkerson, Brett P, Boyapati, Sri Ranga Sai, Swaminathan, Raja
Format Patent
LanguageEnglish
Published 08.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A disclosed method can include (i) positioning a first surface of a component of a semiconductor device on a first plated through-hole, (ii) covering, with a layer of dielectric material, at least a second surface of the component that is opposite the first surface of the component, (iii) removing a portion of the layer of dielectric material covering the second surface of the component to form at least one cavity, and (iv) depositing conductive material in the cavity to form a second plated through-hole on the second surface of the component. Various other apparatuses, systems, and methods are also disclosed.
Bibliography:Application Number: US202217816944