CARBON MOLD FOR DRAM CAPACITOR

Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the remov...

Full description

Saved in:
Bibliographic Details
Main Authors Feng, Jun, Kitajima, Tomohiko, Yu, Hang, Kang, Sung-Kwan, Guggilla, Srinivas, Potter, Jayden, Jiang, Yufeng, Zhou, Yifeng, Fishburn, Fredrick, Fu, Qian, Chen, Shih Chung, Janakiraman, Karthik, Padhi, Deenesh, Kalutarage, Lakmal C
Format Patent
LanguageEnglish
Published 01.02.2024
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.
Bibliography:Application Number: US202318222086