METHOD OF SELECTIVE ETCHING OF DIELECTRIC MATERIALS
A method includes performing an etch process, including supplying a first process gas and a second process gas onto a surface of a substrate on a substrate support within a processing volume of a processing chamber for a first time duration, wherein the first process gas comprises fluorine-containin...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
01.02.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A method includes performing an etch process, including supplying a first process gas and a second process gas onto a surface of a substrate on a substrate support within a processing volume of a processing chamber for a first time duration, wherein the first process gas comprises fluorine-containing gas, and the second process gas comprises nitrogen-containing gas, and performing an anneal process to sublimate by-products formed on the surface of the substrate during the etch process, and supplying the first process gas without supplying the second process gas into the processing volume of the processing chamber for a second time duration. |
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Bibliography: | Application Number: US202217874142 |